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NTE483 - Silicon NPN Transistor

Description

The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications.

866MHz.

Features

  • D Designed for 806.
  • 866MHz Mobile Equipment D 18W Min. , with Greater than 6dB Gain at 836MHz D Withstands 10:1 VSWR at Rated Operating Conditions D Matched Input Technology D Common Base Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector.
  • Base Voltage, VCBO.
  • 36V Collector.
  • Emitter Voltage, VCEO.

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Datasheet Details

Part number NTE483
Manufacturer NTE Electronics (defunct)
File Size 22.49 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE483 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz. Features: D Designed for 806–866MHz Mobile Equipment D 18W Min., with Greater than 6dB Gain at 836MHz D Withstands 10:1 VSWR at Rated Operating Conditions D Matched Input Technology D Common Base Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . .
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