NTE4164 - high speed Dynamic Random Access Memory

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NTE

NTE4164 high speed Dynamic Random Access Memory by NTE - Datasheet Preview — Datasheet preview – NTE4164

Datasheet Details

Part number	NTE4164
Manufacturer	NTE
File Size	236.75 KB
Description	high speed Dynamic Random Access Memory
Datasheet	NTE4164 Datasheet
Additional preview pages of the NTE4164 datasheet.

Product details

Description

The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16 Lead DIP type package organized as 65,536 words of one bit each. in are latched on chip to simplify s

Features

D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon.

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Published: Jun 28, 2019 |