NTE367 - Silicon NPN Transistor

Product Overview

NTE

NTE367 Silicon NPN Transistor by NTE - Datasheet Preview — Datasheet preview – NTE367

Datasheet Details

Part number	NTE367
Manufacturer	NTE
File Size	22.11 KB
Description	Silicon NPN Transistor
Datasheet	NTE367 Datasheet
Additional preview pages of the NTE367 datasheet.

Product details

Description

The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features

D Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8dB Efficiency: 55% D Characterized with Series Equivalent Large.
Signal Impedance Parameters D Built.
In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
.

📁 Similar Datasheet

NTE362 - Silicon NPN Transistor (NTE Electronics)
NTE30002 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
NTE30003 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
NTE30004 - (NTE30002 - NTE30004) Light Emitting Diode (NTE Electronics)
NTE30005 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
NTE30006 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
NTE30007 - (NTE30005 - NTE30007) Light Emitting Diode (NTE Electronics)
NTE30008 - (NTE30008 - NTE30010) Light Emitting Diode (NTE Electronics)

Other Datasheets by NTE

NTE36 - Silicon Complementary Transistors
NTE361 - Silicon NPN Transistor
NTE363 - Silicon NPN Transistor
NTE365 - Silicon NPN Transistor
NTE366 - Silicon NPN Transistor
NTE368 - Silicon NPN Transistor

Published: May 9, 2005 |