NTE254 - Silicon Complementary Transistors

Product Overview

NTE

NTE254 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE254

Datasheet Details

Part number	NTE254
Manufacturer	NTE
File Size	24.82 KB
Description	Silicon Complementary Transistors
Datasheet	NTE254 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE254, NTE253. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE254 datasheet.

Product details

Description

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built.
In Base.
Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

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Published: Aug 15, 2016 |