NTE253 - Silicon Complementary Transistors

Product Overview

NTE

NTE253 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE253

Datasheet Details

Part number	NTE253
Manufacturer	NTE
File Size	24.82 KB
Description	Silicon Complementary Transistors
Datasheet	NTE253 Datasheet
Additional preview pages of the NTE253 datasheet.

Product details

Description

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built.
In Base.
Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

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Published: May 9, 2005 |