NTE251 - Silicon Complementary Transistors

Product Overview

NTE

NTE251 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE251

Datasheet Details

Part number	NTE251
Manufacturer	NTE
File Size	26.19 KB
Description	Silicon Complementary Transistors
Datasheet	NTE251 Datasheet
Additional preview pages of the NTE251 datasheet.

Product details

Description

The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low frequency switching applications.

Features

D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

📁 Similar Datasheet

NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
NTE2393 - N-Channel MOSFET (INCHANGE)
NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
NTE2662 - Silicon NPN Transistor High Frequency (NTE Electronics)

Other Datasheets by NTE

NTE2510 - Silicon NPN Transistor
NTE2511 - Silicon Complementary Transistors
NTE2512 - Silicon Complementary Transistors
NTE2513 - Silicon Complementary Transistors
NTE2514 - Silicon Complementary Transistors
NTE2515 - Silicon Complementary Transistors

Published: May 9, 2005 |