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NTE2349 - Silicon Darlington Transistors

Description

The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features

  • D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 120V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number NTE2349
Manufacturer NTE Electronics (defunct)
File Size 26.78 KB
Description Silicon Darlington Transistors
Datasheet download datasheet NTE2349 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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