NTE2349 - Silicon Darlington Transistors

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NTE

NTE2349 Silicon Darlington Transistors by NTE - Datasheet Preview — Datasheet preview – NTE2349

Datasheet Details

Part number	NTE2349
Manufacturer	NTE
File Size	26.78 KB
Description	Silicon Darlington Transistors
Datasheet	NTE2349 Datasheet
Additional preview pages of the NTE2349 datasheet.

Product details

Description

The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features

D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built.
In Base.
Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 120V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |