NTE2305 - Silicon Complementary Transistors

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NTE

NTE2305 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE2305

Datasheet Details

Part number	NTE2305
Manufacturer	NTE
File Size	23.70 KB
Description	Silicon Complementary Transistors
Datasheet	NTE2305 Datasheet
Additional preview pages of the NTE2305 datasheet.

Product details

Description

The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

Features

D High Collector.
Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 160V Collector.
Base Voltage, VCB.

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Other Datasheets by NTE

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Published: May 9, 2005 |