NTE219 - Silicon Power Transistor

Product Overview

NTE

NTE219 Silicon Power Transistor by NTE - Datasheet Preview — Datasheet preview – NTE219

Datasheet Details

Part number	NTE219
Manufacturer	NTE
File Size	24.88 KB
Description	Silicon Power Transistor
Datasheet	NTE219 Datasheet
Note	This datasheet PDF includes multiple part numbers: NTE219, NTE130. Please refer to the document for exact specifications by model.
Additional preview pages of the NTE219 datasheet.

Product details

Description

The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features

D DC Current Gain: hFE = 20.
70 @ IC = 4A D Collector.
Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 60V Collector.
Emitter Voltage, VCER.
. . . . 70V Collector.
Base Vo.

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Other Datasheets by NTE

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Published: Aug 16, 2016 |