NTE196 - Silicon Complementary Transistors

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NTE

NTE196 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE196

Datasheet Details

Part number	NTE196
Manufacturer	NTE
File Size	24.27 KB
Description	Silicon Complementary Transistors
Datasheet	NTE196 Datasheet
Additional preview pages of the NTE196 datasheet.

Product details

Description

The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.

Features

D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current.
Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 70V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |