NTE191 - Silicon Complementary Transistors

Product Overview

NTE

NTE191 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE191

Datasheet Details

Part number	NTE191
Manufacturer	NTE
File Size	23.92 KB
Description	Silicon Complementary Transistors
Datasheet	NTE191 Datasheet
Additional preview pages of the NTE191 datasheet.

Product details

Description

The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high voltage video and luminance output stages in TV receivers.

Features

D High Collector.
Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector.
Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 300V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |