NTE190 - Silicon NPN Transistor High Voltage Amplifier

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NTE

NTE190 Silicon NPN Transistor High Voltage Amplifier by NTE - Datasheet Preview — Datasheet preview – NTE190

Datasheet Details

Part number	NTE190
Manufacturer	NTE
File Size	22.71 KB
Description	Silicon NPN Transistor High Voltage Amplifier
Datasheet	NTE190 Datasheet
Additional preview pages of the NTE190 datasheet.

Product details

Description

The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators.

Features

D High Collector.
Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector.
Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 180V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |