NTE188 - Silicon Complementary Transistors

Product Overview

NTE

NTE188 Silicon Complementary Transistors by NTE - Datasheet Preview — Datasheet preview – NTE188

Datasheet Details

Part number	NTE188
Manufacturer	NTE
File Size	22.53 KB
Description	Silicon Complementary Transistors
Datasheet	NTE188 Datasheet
Additional preview pages of the NTE188 datasheet.

Product details

Description

The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

Features

D High Collector.
Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voiltage, VCB.
. 80V Emitter.
Base Voltage, VEB.

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Published: May 9, 2005 |