NTE130 - Silicon Power Transistor

Product Overview

NTE

NTE130 Silicon Power Transistor by NTE - Datasheet Preview — Datasheet preview – NTE130

Datasheet Details

Part number	NTE130
Manufacturer	NTE
File Size	24.88 KB
Description	Silicon Power Transistor
Datasheet	NTE130 Datasheet
Additional preview pages of the NTE130 datasheet.

Product details

Description

The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features

D DC Current Gain: hFE = 20.
70 @ IC = 4A D Collector.
Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 60V Collector.
Emitter Voltage, VCER.
. . . . 70V Collector.
Base Vol.

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Published: May 9, 2005 |