NTE102 - Germanium Complementary Transistors

Datasheet Details

Part number	NTE102
Manufacturer	NTE
File Size	24.54 KB
Description	Germanium Complementary Transistors
Datasheet	NTE102_NTEElectronics.pdf

The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium speed saturated switching applications.

D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter.
Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector.
Base Voltage, VCBO.
25V Collector.
Emitter Voltage, VCES.
. . . . 24V Emitter.
Base Voltage.

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Published: May 9, 2005 |