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MJE15030 - Silicon Complementary Transistors

Description

The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO

220 type case designed for use as a high frequency driver in audio amplifier applications.

Features

  • D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain.
  • Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 150V Collector.
  • Base Voltage, VCBO.

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Datasheet Details

Part number MJE15030
Manufacturer NTE Electronics (defunct)
File Size 60.06 KB
Description Silicon Complementary Transistors
Datasheet download datasheet MJE15030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE15030 (NPN) & MJE15031 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier TO−220 Type Package Description: The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO−220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . .