Description
The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO
220 type package designed for general purpose amplifier and low
speed switching applications.
Features
- D High DC Current Gain: hFE = 2500 Typ D Collector.
- Emitter Sustaining Voltage (@ 100mA):
2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min D Low Collector.
- Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
- In Base.
- Emitter Shunt Resistor
Absolute Maximum Ratings: (Note 1) Collector.
- Emitter Voltage, VCEO
2N6387.
2N6387-NTE.pdf
