Datasheet4U.com

2N6109 - Silicon PNP Transistor

NTE

📥 Download Datasheet

2N6109 Datasheet Preview — Preview of 2N6109 PDF

datasheet Preview Page 2

Datasheet Details

Part number	2N6109
Manufacturer	NTE
File Size	64.85 KB
Description	Silicon PNP Transistor
Datasheet	2N6109-NTE.pdf

2N6109 Product details

Description

The 2N6109 is a silicon PNP transistor in a TO 220 type package designed for use in general purpose amplifier and switching applications.

Features

D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current.
Gain Bandwidth Product: fT = 10MHz Min @ IC = 500mA Absolute Maximum Ratings: (Note 1) Collector.
Emitter Voltage, VCEO.
. . . . 50V Collector.
Base Voltage, VCB.

📁 2N6109 Similar Datasheet

2N6100 - NPN Transistor (INCHANGE)
2N6101 - Power Transistors (RCA)
2N6102 - Power Transistors (RCA)
2N6103 - Power Transistors (RCA)
2N6104 - RF POWER TRANSISTORS (ETC)
2N6105 - RF POWER TRANSISTORS (ETC)
2N6106 - Power Transistors (RCA)
2N6107 - SILICON PNP SWITCHING TRANSISTORS (STMicroelectronics)

Other Datasheets by NTE

2N6123 - Silicon NPN Transistor
2N6125 - Silicon PNP Transistor
2N6028 - Programmable Unijunction Transistor
2N6052 - Silicon PNP Transistor
2N6057 - Silicon NPN Transistor
2N6059 - Silicon NPN Transistor

Published: Jul 4, 2020 |