NTE99 - Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode

Product Overview

NTE Electronics

Datasheet Details

Part number	NTE99
Manufacturer	NTE Electronics
File Size	27.66 KB
Description	Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
Datasheet	NTE99 Datasheet
Additional preview pages of the NTE99 datasheet.

Product details

Description

The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. operated switchmode applications.

Features

D Fast Turn.
Off Times: 1.0µs (max) Inductive Crossover Time.
20 Amps 2.5µs (max) Inductive Storage Time.
20 Amps D Operating Temperature Range:.
65° to +200°C Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 400V Collector.
Emitter Voltage, VCEV.
. . . 600.

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Published: May 12, 2005 |