NSM2012 Datasheet (NOVOSENSE) - Hall-Effect-Based Current Sensor IC

NSM2012, Hall-Effect-Based Current Sensor IC

13 5.1.

OVERVIEW

NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 3kV High-Isolation Datasheet (EN) 1.0 Product Overview NSM2012 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip.

NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar.

A differential Hall pair is used internally, so it has a strong i

NSM2012 Features

* High bandwidth and fast response time

* 400kHz bandwidth

* 1.5us response time

* High-precision current measurement

* Differential Hall sets can immune stray field

* High isolation level that meets UL standards

* Withstand isolation voltage (VISO): 3000Vrms

* Maximu