Description
IRFH5104PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 40 3.5 53 1.4 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) .
Features
* Features Low RDSon (≤ 3.5mΩ) Low Thermal Resistance to PCB (≤ 1.1°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable pApplications
* Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Man2406KL-05W-B20 Distributors
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