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2SA940 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min) DC Current Gain : hFE=40-140@lc=-0.5A Complement to Type 2SC2073 APPLICATIONS

vertical output applications.

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Datasheet Details

Part number 2SA940
Manufacturer NJS
File Size 66.76 KB
Description Silicon PNP Power Transistor
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Full PDF Text Transcription

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA940 DESCRIPTION • Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min) • DC Current Gain : hFE=40-140@lc=-0.5A • Complement to Type 2SC2073 APPLICATIONS • Designed for use in general purpose power amplifier, vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current-Continuous Total Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.
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