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P6006BI - N-Channel Transistor

Download the P6006BI datasheet PDF. This datasheet also covers the P6006BI-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P6006BI-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P6006BI
Manufacturer NIKO-SEM
File Size 241.21 KB
Description N-Channel Transistor
Datasheet download datasheet P6006BI Datasheet

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Other Datasheets by NIKO-SEM

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P6006BD N-Channel Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P6006BI Field Effect Transistor TO-251 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 65mΩ ID 18A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg 123 1. GATE 2. DRAIN 3. SOURCE LIMITS 60 ±20 18 11.8 34 18 16 50 20 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC 1Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 2.
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