Datasheet Details
Part number:
P5515BD, P5515BD-NIKO
Manufacturer:
NIKO-SEM
File Size:
159.00 KB
Description:
N-channel enhancement mode field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: P5515BD, P5515BD-NIKO.
Please refer to the document for exact specifications by model.
P5515BD, P5515BD-NIKO, N-Channel Enhancement Mode Field Effect Transistor
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P5515BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 55mΩ ID 24.6A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 1mH TC = 25 °C TC = 100 °C
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