P1006BD, P1006BD-NIKO Datasheet - NIKO-SEM

P1006BD N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P1006BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 66A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 0.1mH TC = 25 ° C TC = .

P1006BD-NIKO-SEM.pdf