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P0603BDG - N-Channel MOSFET

Download the P0603BDG datasheet PDF. This datasheet also covers the P0603BDG-NIKO variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P0603BDG-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P0603BDG MOSFET UNIKC
P0603BD MOSFET UNIKC
P0603BDB MOSFET UNIKC
P0603BDD MOSFET UNIKC
P0603BDF MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P0603BKE N-Channel FET
P0603YK Dual N-Channel FET
P0610BT N-Channel Transistor
P0610BTF N-Channel Transistor
P0660ETF N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0603BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 6.5m ID 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 75 50 170 40 140 5.6 60 32.75 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAS A L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.