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2N2609 - P-CHANNEL POWER MOSFET

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Part number 2N2609
Manufacturer NES
File Size 91.34 KB
Description P-CHANNEL POWER MOSFET
Datasheet download datasheet 2N2609 Datasheet

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Technical Data 2N2609 JAN POWER MOSFET P CHANNEL Processed per MIL-PRF-19500/296 …DESIGNED FOR GENERAL PURPOSE SMALL SIGNAL SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage VGSS 30 0 Power Dissipation (1) TA = 25 C PD 300 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 (1) Derate linearly, 1.71 mW/ 0C for TA = 250C. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL Gate-Source Breakdown Voltage V(BR)GSS V DS = 0, IG = 1.0 µAdc Gate Reverse Current V DS = 0, VGS = 30 Vdc IGSS VDS = 0, VGS = 15 Vdc Drain Current V GS = 0, V DS = 5.0 Vdc IDDSS Gate-Source Cutoff Voltage VGS(off) V DS = 5.0 V, I D = 1.