Description
The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a 262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
Features
- Low voltage core supply : VDD = 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y) VDD = 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y).
- Synchronous operation.
- Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60, -A75, -C60, -C75) TA =.
- 40 to +85 °C (-A44Y, -A50Y, -A60Y, -A75Y, -C60Y, -C75Y).
- 100 percent bus utilization.
- Internally self-timed write control.
- Burst read / write : Interleaved burst and linear burst seque.
UPD4481162_NEC.pdf
