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UPA827TF - HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR

Features

  • High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e| = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz.
  • 6-pin thin-type small mini mold package.
  • Built-in 2 transistors (2 u 2SC5179) 2.

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Datasheet Details

Part number UPA827TF
Manufacturer NEC
File Size 80.02 KB
Description HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR
Datasheet download datasheet UPA827TF Datasheet

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5179) THIN-TYPE SMALL MINI MOLD FEATURES • High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e| = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • 6-pin thin-type small mini mold package • Built-in 2 transistors (2 u 2SC5179) 2 PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.1 1.30 ORDERING INFORMATION Part Number Quantity Loose products (50 pcs) Taping products (3 kpcs/reel) Packing Style Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape. 2.00±0.2 0.65 2 0.65 3 PPA827TF PPA827TF-T1 0.60±0.
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