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UPA807T - NPN Transistor

Features

  • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz.
  • A Super Mini Mold Package Adopted.
  • Built-in 2 Transistors (2 × 2SC5179) 2.0±0.2.

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Datasheet Details

Part number UPA807T
Manufacturer NEC
File Size 56.88 KB
Description NPN Transistor
Datasheet download datasheet UPA807T Datasheet

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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179) 2.0±0.2 PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 1.3 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.65 2 µPA807T µPA807T-T1 0.65 3 0.9±0.1 pcs.
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