UPA2727UT1A Datasheet (NEC) - MOS FIELD EFFECT TRANSISTOR

UPA2727UT1A, MOS FIELD EFFECT TRANSISTOR

The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.

PACKAGE DRAWING (Unit: mm) 1.27 * Low on-state resistance RDS(on)1 = 9.6 mΩ MAX.

(VGS = 10 V, ID = 8 A) 0.42 *0.05 3 4 +0.1 6 5 6 ±0.2 5.4 ±0.2 RDS(on)2 = 15 mΩ MAX.

(VGS = 4.5 V, ID = 8 A) *

UPA2727UT1A Features

* 1 8 0.10 S 0.10 M 0 +0.05

* 0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 1 0.2 4.1 ±0.2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg