Description
The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
Features
- Low on-resistance
1.44
RDS(on)1 = 9.5 mΩ MAX. (VGS =.
- 10 V, ID =.
- 6.5 A)
1.8 MAX. 1 5.37 MAX. 4
6.0 ±0.3 4.4
+0.10.
- 0.05
RDS(on)2 = 13.5 mΩ MAX. (VGS =.
- 4.5 V, ID =.
- 6.5 A) 5 RDS(on)3 = 15.0 mΩ MAX. (VGS =.
- 4.0 V, ID =.
- 6.5 A).
- Low Ciss : Ciss = 3800 pF TYP.
- Built-in G-S protection diode.
- Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN. 0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10.
UPA1730_NEC.pdf
