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NP50P06SDG - MOS FIELD EFFECT TRANSISTOR

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NEC

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NP50P06SDG MOS FIELD EFFECT TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – NP50P06SDG

Datasheet Details

Part number	NP50P06SDG
Manufacturer	NEC
File Size	235.80 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP50P06SDG Datasheet
Additional preview pages of the NP50P06SDG datasheet.

Product details

Description

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =.
10 V, ID =.
25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =.
4.5 V, ID =.
25 A).
Low input capacitance Ciss = 5000 pF TYP. (TO-252).

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Published: Aug 19, 2015 |