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NE76084S - LOW NOISE L TO Ku BAND GaAs MESFET

General Description

The NE76084S provides a low noise figure and high associated gain through 14 GHz.

The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.

Key Features

  • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz.
  • HIGH.

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Datasheet Details

Part number NE76084S
Manufacturer NEC
File Size 42.24 KB
Description LOW NOISE L TO Ku BAND GaAs MESFET
Datasheet download datasheet NE76084S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Noise Figure, NF (dB) Associated Gain, GA (dB) LOW NOISE L TO Ku BAND GaAs MESFET NE76084S FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL DESCRIPTION The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features a recessed 0.3 micron gate and triple epitaxial technology. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 3.5 Ga 3 2.5 2 1.