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NE722S01 - NECs C TO X BAND N-CHANNEL GaAs MES FET

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NEC

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NE722S01 NECs C TO X BAND N-CHANNEL GaAs MES FET by NEC - Datasheet Preview — Datasheet preview – NE722S01

Datasheet Details

Part number	NE722S01
Manufacturer	NEC
File Size	128.75 KB
Description	NECs C TO X BAND N-CHANNEL GaAs MES FET
Datasheet	NE722S01 Datasheet
Additional preview pages of the NE722S01 datasheet.

Product details

Description

NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.

Features

HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz.
OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz.
LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz.
GATE LENGTH: LG = 0.8 µm (recessed gate).
GATE WIDTH: WG = 400 µm 2.

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Published: May 7, 2005 |