NE27200 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NEC

NE27200 Datasheet Preview — Preview of NE27200 PDF

Datasheet Details

Part number	NE27200
Manufacturer	NEC
File Size	39.82 KB
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet	NE27200_NEC.pdf

NE27200 Product details

Description

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.

Features

Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz.
Gate Length : Lg = 0.2 µm.
Gate Width : Wg = 200 µm.

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Published: May 12, 2005 |