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D43256BGU - UPD43256BGU

Description

The µPD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available (L, LL, A, and B versions).

And A and B versions are wide voltage operations.

Features

  • 32,768 words by 8 bits organization.
  • Fast access time: 70, 85, 100, 120, 150 ns (MAX. ).
  • Wide voltage range (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V).
  • 2 V data retention.
  • OE input for easy.

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Datasheet Details

Part number D43256BGU
Manufacturer NEC
File Size 195.73 KB
Description UPD43256BGU
Datasheet download datasheet D43256BGU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.DataSheet4U.com MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations. The µPD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I). Features • 32,768 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Wide voltage range (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • 2 V data retention • OE input for easy application Operating supply voltage V 4.5 to 5.5 Operating temperature °C 0 to 70 Standby supply current µA (MAX.) 50 15 3.0 to 5.5 2.7 to 5.
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