C3355 2SC3355

NEC

Description

www.DataSheet4U.com DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTI.
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

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Datasheet Specifications

Part number: C3355
Manufacturer: NEC
File Size: 117.85 KB
Datasheet: C3355_NEC.pdf
Description: 2SC3355

Features

* Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
* High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX. ) 5.5 MAX.

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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