C2690 NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR 2SC2690,2690A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION .
These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. Suitable for use in.

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Datasheet Specifications

Part number: C2690
Manufacturer: NEC
File Size: 1.52 MB
Datasheet: C2690-NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit.
* High voltage and high fT VCEO = 120 V (2SC2690) / 160 V (2SC2690A) fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A)
* Complementary to the 2SA1220 and 2SA1220A PNP t

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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C2690 NPN SILICON EPITAXIAL TRANSISTOR NEC

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