B601 2SB601

NEC

Description

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMP.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: B601
Manufacturer: NEC
File Size: 162.72 KB
Datasheet: B601_NEC.pdf
Description: 2SB601

Features

* High-DC current gain due to Darlington connection
* Low collector saturation voltage
* Low collector cutoff current
* Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers PACKAGE DRAWING (UNIT: mm) ABSOLUTE M

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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B601 2SB601 NEC

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