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B1669 2SB1669

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Description

DATA SHEET SILICON POWER TRANSISTOR www.DataSheet4U.com 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power t.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number
B1669
Manufacturer
NEC
File Size
164.08 KB
Datasheet
B1669_NEC.pdf
Description
2SB1669

Features

* High DC current amplifier rate hFE ≥ 100 (VCE =
* 5.0 V, IC =
* 0.5 A)
* Z type available for surface mounting supported prodcuts ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector c

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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