B1432 PNP SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: B1432
Manufacturer: NEC
File Size: 103.38 KB
Datasheet: B1432-NEC.pdf
Description: PNP SILICON EPITAXIAL TRANSISTOR

Features

* High hFE due to Darlington connection hFE ≥ 1,000 @VCE =
* 2.0 V, IC =
* 10 A)
* Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitte

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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