Datasheet Details
- Part number
- B1261-Z
- Manufacturer
- NEC
- File Size
- 1.31 MB
- Datasheet
- B1261-Z_NEC.pdf
- Description
- 2SB1261-Z
B1261-Z Description
DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR .
The 2SB1261-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
High hFE hFE = 10.
B1261-Z Features
* High hFE hFE = 100 to 400
* Low VCE(sat) VCE(sat) ≤ 0.3 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
* 60
V
Collector to Emitter Voltage
VCEO
* 60
V
Emitter to Base Voltage
VEBO
* 7.0
V
Collector Current (DC)
IC(DC)
B1261-Z Applications
* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
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