B1261-Z 2SB1261-Z

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR .
The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. High hFE hFE = 10.

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Datasheet Specifications

Part number: B1261-Z
Manufacturer: NEC
File Size: 1.31 MB
Datasheet: B1261-Z_NEC.pdf
Description: 2SB1261-Z

Features

* High hFE hFE = 100 to 400
* Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO
* 60 V Collector to Emitter Voltage VCEO
* 60 V Emitter to Base Voltage VEBO
* 7.0 V Collector Current (DC) IC(DC)

Applications

* of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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B1261-Z 2SB1261-Z NEC

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