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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3230C contains a diode and high resistivity between its gates and sources, for achieving short stability
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.4
0.1–0.05
+0.1
time during power-on. In addition, because of its compact
1.6 ±0.1
for compact ECMs for audio or mobile devices such as cellphones.
0.8 ±0.1
package and low noise, the 2SK3230C is especially suitable
3
2
1
FEATURES
• Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on. • Small package: SC-89 (TUSM)
0.5 ±0.05
0.5
0.5
1.6 ±0.1
0.2 +0.
2SK3230C Datasheet
