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2SK2826 - SWITCHING N-CHANNEL POWER MOSFET

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX. ) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX. ) (VGS = 4.0 V, ID = 35 A).
  • Low Ciss : Ciss = 7200 pF (TYP. ).
  • Built-in Gate Protection Diode.

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Datasheet Details

Part number 2SK2826
Manufacturer NEC
File Size 74.62 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK2826 Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, –10 ±70 ±280 100 1.
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