Datasheet4U.com

2SJ606 - MOS FIELD EFFECT TRANSISTOR

NEC

📥 Download Datasheet

2SJ606 Datasheet Preview — Preview of 2SJ606 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	2SJ606
Manufacturer	NEC
File Size	114.76 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ606_NEC.pdf

2SJ606 Product details

Description

The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS =.
10 V, ID =.
42 A) RDS(on)2 = 23 mΩ MAX. (VGS =.
4.0 V, ID =.
42 A).
Low input capacitance: Ciss = 4800 pF TYP. (VDS =.
10 V, VGS = 0 V).
Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB).

📁 2SJ606 Similar Datasheet

2SJ607 - MOSFET (Kexin)
2SJ608 - Ultrahigh Speed Switching Applications (Sanyo Semicon Device)
2SJ609 - DC / DC Converter Applications (Sanyo Semicon Device)
2SJ610 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
2SJ612 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
2SJ613 - Ultrahigh Speed Switching Applications (Sanyo)
2SJ615 - P-Channel Silicon MOSFET (Sanyo)
2SJ619 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by NEC

2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ601 - P-Channel Power MOSFET
2SJ602 - MOS FIELD EFFECT TRANSISTOR
2SJ603 - MOS FIELD EFFECT TRANSISTOR
2SJ604 - P-Channel Power MOSFET
2SJ605 - MOS FIELD EFFECT TRANSISTOR

Published: Jul 12, 2007 |