Datasheet4U Logo Datasheet4U.com

2SJ559 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Description

The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source.

The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

0.8 ± 0.

Features

  • Can be driven by a 2.5 V power source.
  • Low gate cut-off voltage. 1.0 1.6 ± 0.1.

📥 Download Datasheet

Datasheet Details

Part number 2SJ559
Manufacturer NEC
File Size 50.03 KB
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
Datasheet download datasheet 2SJ559 Datasheet

📁 Similar Datasheet

  • 2SJ550 - Silicon P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ550 - P-Channel MOSFET (Renesas)
  • 2SJ550L - Silicon P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ550L - P-Channel MOSFET (Renesas)
  • 2SJ550S - Silicon P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ550S - P-Channel MOSFET (Renesas)
  • 2SJ551 - Silicon P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ551 - P-Channel MOSFET (Renesas)
  • 2SJ551L - Silicon P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ551L - P-Channel MOSFET (Renesas)
Other Datasheets by NEC
  • 2SJ557 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
  • 2SJ598 - P-Channel MOSFET
  • 2SJ599 - P-Channel MOSFET
  • 2SJ132 - MOS FIELD EFFECT POWER TRANSISTORS
  • 2SJ132-Z - MOS FIELD EFFECT POWER TRANSISTORS
  • 2SJ133 - P-Channel Power MOSFET
  • 2SJ133-Z - P-Channel Power MOSFET
  • 2SJ134 - P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 –0.05 1.6 ± 0.1 0.8 ± 0.1 D 0 to 0.1 G 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 S FEATURES • Can be driven by a 2.5 V power source. • Low gate cut-off voltage. 1.0 1.6 ± 0.
Published: |