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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
• High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package
PACKAGE DIMENSIONS (in mm)
2.1±0.1 1.25±0.1 0.2 +0.1 –0 0.15 +0.1 –0
1.3 0.65 0.65
2.0±0.2
E
ORDERING INFORMATION
PART NUMBER 2SC5408-T1 QUANTITY 3 kpcs/reel PACKING STYLE 8-mm wide emboss taping, 6-pin (collector) feed hole direction
0.9±0.1
B
0.7
Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units).