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DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89).
4.5±0.1 1.6±0.2 1.5±0.1
PACKAGE DIMENSIONS
(Unit: mm)
• Low Distortion IM2 = 57.5 dB TYP. @ VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. • Low Noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 1 GHz High Power Dissipation. • Power Mini Mold Package Used. @ VCE = 10 V, IC = 50 mA
0.8 MIN.
0.42 ±0.06
E 1.5
C
B
0.42±0.06 0.47 ±0.06 3.0 0.41 +0.05
−0.
2SC4536 Datasheet
