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2SC3357 - NPN Silicon Transistor

Description

The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristic.

Features

  • Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz.
  • Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05.
  • 0.03.

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Datasheet Details

Part number 2SC3357
Manufacturer NEC
File Size 77.51 KB
Description NPN Silicon Transistor
Datasheet download datasheet 2SC3357 Datasheet

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DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.
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